Prof. RNDr. Vaclav HOLY, CSc.

Charles University in Prague, FMP

Specialization: X-ray characterization of nanostructures

Prof. Vaclav Holy (59) has received his Master degree at at the University of J.E.Purkyne, Brno (nowadays Masaryk University), Czechoslovakia in 1976. And at the same University six years later he has received his CSc degree (comparable to PhD) in Experimental physics, thesis: Dislocation structure of Al single crystals grown by recrystallization. During his professional carrier he worked as the professor at the Masaryk University in Brno, Department of Condensed Matter Physics (2000-2003), as visiting professor at the University of Houston, USA, Department of Physics (2000-2001) and at the J. Kepler University Linz, Austria, Institute of Semiconductor Physics (1994-1995). He is member of the beam line review committee at ESRF synchrotron source, Grenoble, France.

Research skills of prof Holy include numerical simulations in solid-state physics and x-ray diffraction theory a X-ray measurements using synchrotron radiation. His current research is focused on X-ray scattering from epitaxial thin layers, dynamical diffraction theory of x-rays, statistical theory of scattering, processes of self-organization during epitaxial growth of semiconductors.

Publication activity: V. Holy is the author ofabout 260 articles in international scientific journals, about 3900 citations, h-index 27 (December 2011, WoS), co-author of two monographs

10 most important publications in last 10 years:

[1] U. Pietsch, V. Holý, and T. Baumbach, High-Resolution X-Ray Scattering From Thin Films to Lateral Nanostructures, Springer-Verlag Berlin, Heidelberg, New York 2004, 408 pages, 241 figures.

[2] J. Stangl, V. Holý, and G. Bauer, Structural properties of self-organized semiconductor nanostructures,Rev. Mod. Phys. 76, 725-783 (2004).

[3] V. Holý, Z. Matěj, O. Pacherová, V. Novák, M. Cukr, K. Olejník, and T. Jungwirth, Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence, Phys. Rev. B 74, 245205 (2006).

[4] L. Abtin, G. Springholz, and V. Holý, Surface Exchange and Shape Transitions of PbSe Quantum Dots during Overgrowth, Phys. Rev. Lett. 97, 266103 (2006).

[5] D. Grutzmacher, T. Fromherz, C. Dais, J. Stangl, E. Muller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, V. Holý, and G. Bauer, Three-dimensional Si/Ge quantum dot crystals, Nano Letters 7, 3150-3156 (2007).

[6] M.-I. Richard, T. H. Metzger, V. Holý, and K. Nordlund, Defect Cores Investigated by X-Ray Scattering close to Forbidden Reflections in Silicon, Phys. Rev. Lett. 99, 225504(2007)

[7] V. Holý, R. T. Lechner, S. Ahlers, L. Horák, T. H. Metzger, A. Navarro-Quezada, A. Trampert, D. Bougeard, and G. Bauer, Diffuse x-ray scattering from inclusions in ferromagnetic Ge1−xMnxlayers, Phys. Rev. B 78, 144401 (2008).

[8] V. Holý, J. Stangl, T. Fromherz, R. T. Lechner, E. Wintersberger, G. Bauer, C. Dais, E. Müller, and D. Grützmacher, X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal, Phys. Rev. B 79, 035324 (2009).

[9] N. Hrauda, J. J. Zhang, E. Wintersberger, T. Etzelstorfer, B. Mandl, J. Stangl, V. Holy, V. Jovanovic, C. Biasotto, L. K. Nanver, J. Moers, D. Gruetzmacher and G. Bauer, X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor, Nano Letters, 11, 2875 (2011).

[10] B. G. Park, J. Wunderlich, X. Marti, V. Holy, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A.B. Shick, and T. Jungwirth, A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction, Nature Materials 10, 347 (2011).

At the NANOCON´12 conferenceprof. Holy will present thelecture X-ray characterization of semiconductor nanostructures

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